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| KSC5020 KSC5020 High Voltage, High Quality * High Speed Switching : tF=0.1s * Wide SOA 1 TO-220 2.Collector 3.Emitter 1.Base NPN Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Collector Dissipation (TC=25C) Junction Temperature Storage Temperature Value 800 500 7 3 6 1 40 150 - 55 ~ 150 Units V V V A A A W C C Electrical Characteristics TC=25C unless otherwise noted Symbol BVCBO BVCEO BVEBO VCEX(sus) ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) Cob fT tON tSTG tF Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn On Time Storage Time Fall Time Test Condition IC = 1mA, IE = 0 IC = 5mA, IB = 0 IE = 1mA, IC = 0 IC = 1.5A, IB1=-IB2= 0.6A L = 2mH, Clamped VCB = 500V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 0.3A VCE = 5V, IC = 1.5A IC = 1.5A, IB = 0.3A IC = 1.5A, IB = 0.3A VCB = 10V, f = 1MHz VCE = 10V, IC = 0.3A VCC = 200V IC=5IB1 = -2.5IB2=2A RL = 100 50 18 0.5 3 0.3 15 8 Min. 800 500 7 500 10 10 50 1 1.5 V V pF MHz s s s Typ. Max. Units V V V V A A hFE Classification Classification hFE1 R 15 ~ 30 O 20 ~ 40 Y 30 ~ 50 (c)2002 Fairchild Semiconductor Corporation Rev. B1, December 2002 KSC5020 Typical Characteristics 5 1000 IC[A], COLLECTOR CURRENT 4 hFE, DC CURRENT GAIN IB = 500mA 3 100 IB = 400mA IB = 300mA IB = 200mA IB = 100mA 2 10 1 IB = 50mA IB = 20mA 0 0 2 4 6 IB = 0 8 10 1 0.01 0.1 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10 10 IC = 5 IB VCC= 200V IC= 5IB1= -2.5IB2 1 VBE(sat) tON, tSTG, tF [s], TIME tSTG 1 tON tF 0.1 0.1 VCE(sat) 0.01 0.01 0.1 1 10 0.01 0.1 1 10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Figure 4. Turn On, Storage and Fall Time vs. Collector Current 4 100 VCE = 5V IC[A], COLLECTOR CURRENT 3 IC[A], COLLECTOR CURRENT 10 ICP(max) IC(max) 50s P= C4 0W 0 10 s s 1m s m 10 1 2 DC 0.1 1 0.01 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1E-3 1 10 100 1000 VBE[V], BASE-EMITTER VOLTAGE VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Base-Emitter On Voltage Figure 6. Forward Bias Safe Operating Area (c)2002 Fairchild Semiconductor Corporation Rev. B1, December 2002 KSC5020 Typical Characteristics (Continued) 10 50 IC[A], COLLECTOR CURRENT 1 PC[W], POWER DISSIPATION IB2 = -0.6A L = 200H 40 30 20 0.1 10 0.01 10 100 1000 0 0 25 50 o 75 100 125 150 175 VCE[V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE Figure 7. Reverse Bias Safe Operating Area Figure 8. Power Derating (c)2002 Fairchild Semiconductor Corporation Rev. B1, December 2002 KSC5020 Package Dimensions TO-220 9.90 0.20 1.30 0.10 2.80 0.10 4.50 0.20 (8.70) o3.60 0.10 (1.70) 1.30 -0.05 +0.10 9.20 0.20 (1.46) 13.08 0.20 (1.00) (3.00) 15.90 0.20 1.27 0.10 1.52 0.10 0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20] 10.08 0.30 18.95MAX. (3.70) (45 ) 0.50 -0.05 +0.10 2.40 0.20 10.00 0.20 Dimensions in Millimeters (c)2002 Fairchild Semiconductor Corporation Rev. B1, December 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACTTM ActiveArrayTM FACT Quiet seriesTM BottomlessTM FAST(R) FASTrTM CoolFETTM CROSSVOLTTM FRFETTM GlobalOptoisolatorTM DOMETM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER ImpliedDisconnectTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET(R) VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2002 Fairchild Semiconductor Corporation Rev. I1 |
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